دیتاشیت MJD122T4G
مشخصات دیتاشیت
نام دیتاشیت | MJD122/127, NJVMJD122/127 |
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حجم فایل | 103.257 کیلوبایت |
نوع فایل | |
تعداد صفحات | 8 |
دانلود دیتاشیت MJD122/127, NJVMJD122/127 |
MJD122/127, NJVMJD122/127 Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi MJD122T4G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 1.75W
- Transition frequency (fT): 4MHz
- DC current gain (hFE@Vce,Ic): 1000@4V,4A
- Collector-emitter voltage (Vceo): 100V
- Collector cut-off current (Icbo@Vcb): 10uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@8A,80mA
- Package: TO-252
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 1.75W
- Frequency - Transition: 4MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Base Part Number: MJD12
- detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK